Graphene revolution, pioneering semiconductor breakthrough sparks new era in electronics
By Paul Aginnah |
In a groundbreaking development, researchers at the Georgia Institute of Technology in the U.S. have achieved a major breakthrough in the realm of electronics by creating the world's first functional semiconductor using graphene.
In a groundbreaking development, researchers at the Georgia Institute of Technology in the U.S. have achieved a major breakthrough in the realm of electronics by creating the world's first functional semiconductor using graphene. This revolutionary discovery has the potential to usher in a new era of electronic devices and components.
Graphene, a remarkable material composed of carbon atoms bound together with extraordinary strength, has long been recognized for its potential in revolutionizing electronics. The newly created functional graphene semiconductor, a sheet of carbon atoms capable of conducting electricity under specific conditions, represents a significant leap forward in the field.
Silicon, the current mainstay semiconductor, is increasingly revealing its limitations as demands for faster computers and smaller devices surge. The team of researchers, led by Walter de Heer, a Dutch physicist and professor at the Georgia Institute of Technology, collaborated with researchers from China to develop a graphene semiconductor that seamlessly integrates with existing microelectronics processing methods.
One of the standout features of graphene is its exceptional electrical conductivity coupled with high resistance to heat and acids. However, harnessing control over the flow of electricity within graphene semiconductors has proven challenging until now, prompting the need for extensive research. Semiconductors are crucial in creating logic chips that power computers by regulating electrical currents.
The primary obstacle in utilizing graphene as a semiconductor has been the absence of a bandgap, a crucial regulator of power in electronic devices. Semiconductors typically have energy bands with a point, known as a bandgap, where electrons can transition between bands, facilitating the controlled flow of electricity. Overcoming this hurdle, De Heer's team successfully created graphene with a bandgap and even demonstrated a functional transistor.
The innovative manufacturing process involves using heated silicon carbide wafers that cause the silicon to evaporate, leaving a layer of graphene on top. This method shows promise for scalability, aligning with existing manufacturing processes for silicon chips.
Despite the immense potential of this discovery, experts suggest that graphene is unlikely to replace silicon chips in the immediate future. According to David Carey, a researcher at the University of Surrey, significant refinements are still needed in terms of transistor size, quality, and manufacturing techniques. Silicon's widespread use and established infrastructure provide it with a substantial advantage, considering its affordability and well-established manufacturing capabilities. While graphene circuits hold the promise of enhanced speed and efficiency, there are still hurdles to overcome before they can compete with silicon on a large scale.
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